Diffusional Creep in Sintered Silicon Carbide

Development of Creep-Resistant Tungsten Carbide Copper Cemented Carbide

Fine-grained tungsten carbide copper (WC-Cu) cemented carbide was sintered via spark plasma sintering at 1773K using a fine WC powder with a mean particle size of 0.11 mm. The mechanical properties were compared with tungsten carbide cobalt (WC-Co) cemented carbide and a binderless WC-sintered material. The Vickers hardness and fracture toughness obtained by the indentation fracture method for ...

Properties of nanostructured diamond-silicon carbide composites sintered by high pressure infiltration technique

A high-pressure silicon infiltration technique was applied to sinter diamond–SiC composites with different diamond crystal sizes. Composite samples were sintered at pressure 8 GPa and temperature 2170 K. The structure of composites was studied by evaluating x-ray diffraction peak profiles using Fourier coefficients of ab initio theoretical size and strain profiles. The composite samples have pr...

Silicon Nitride and Silicon Carbide

Boron carbide/n-silicon carbide heterojunction diodes

Silicon carbide microdisk resonator.

We demonstrate a silicon carbide (SiC) microdisk resonator with an intrinsic optical quality factor of 6.19×10(3), fabricated on the 3C-SiC-on-Si platform. We characterize the temperature dependence of the cavity resonance and obtain a thermo-optic coefficient of 2.92×10(-5)/K for 3C-SiC. Our simulations show that the device exhibits great potential for cavity optomechanical applications.